Photodiodes

The photodiode material is silicon, and the response spectrum is 300-1100nm; UV enhancement at 355nm; with a large target surface of 3000um, it is very suitable for doing low light detection, fluorescence detection and other applications.

YB-SIAPD3000UV1 Ф3mm 300~1100nm silicon avalanche photodiode UV enhanced TO5-e

800μm, 500μm, 230μm photosensitive surface;Laser distance measurement, laser warning, LIDAR and other applications.

YB-SIAPD-X Silicon Avalanche Photodiode 400-1100nm Peak wavelength 905nm

Silicon avalanche photodetector, 1064 enhanced, 800um photosensitive, TO package, suitable for LIDAR and other applications.

YB-SIAPD800A1 400～1100nm Si 800μm APD Chip 1064nm enhanced

The chip is a PIN-type photodetector made of InGaAs material, responding to near-infrared light 1100-1650nm, in a square metal flange package with FC/APC interface, suitable for integration in housing structures such as modules.

YBPD-RA-70BR-BG(S) InGaAs PIN Photodiode FC Flange 1100-1654nm

900-2600nm InGaAs PD Wide dynamic range, High Responsibility,Low Dark Current,Standard To-46 package.

YBPD1000V1TO_1P4A 900-2600nm InGaAs Extended Photodiode TO-CAN

High-speed photodetectors, 800nm to 1650nm, bandwidths from 6G to 24G, with DC or AC coupling options. Suitable for high speed photodetection.

OM-RxC000Nx-OW0x ghz photodiode analog optical receiver with pigtail

This is DC-40G analog photodetector, Small size package, High responsivity: typical 0.75 mA/mW@ 1550nm, for antenna remote control, satellite communication, distributed antenna system, high speed test and measurement, Video Signal Distribution in HFC and FTTx Nodes, Wireless signal transport and other applications.

OD-PVR000PF-OXK0 40Ghz Analog Photodetector 1100nm-1620nm

InGaAs APD avalanche photodetector, wavelength: 950-1700nm; diameter Φ 200μm, used for distance measurement, spatial light transmission, LIDAR, low light detection, available in bare chip, TO-CAN, pigtail, flange and other packaging forms.

GYAPD200V1 InGaAs APD Photodiodes Φ200μm 950-1700nm TO-CAN

This is a 500um diameter InGaAs APD photodetector, the wavelength range is 950-1700nm, Respondsivity at 1550nm is 0.9A/W, bandwidth 450MHz, we can provide die, but also according to customer packaging requirements for chip packaging, such as (TO package, pigtail package, etc.)

GYAPD500V1 InGaAs Avalanche Photodiode 500um APD Chip

400-1100nm Si PIN Photodiode 200um

PD-RA-2HBR-BG-Si 400-1100nm Si-PD Photodiode Devices

1100-1650nm InGaAs PIN Photodiodes bandwidth 2GHz with Pigtails and FC/PC

PD-PF1-80DR(1.2m) 1100-1650nm 2G PIN Photodiodes Pigtail FC/PC

ingaas avalanche photodiode, Φ 2000μm, used for Distance measurement, Spatial light transmission, available in bare die, TO-39

GYAPD2000V1 InGaAs Avalanche Photodiode 2000um APD Chip

InGaAs avalanche photodiode, Φ 3000μm, used for Distance measurement, Spatial light transmission, available in bare die, TO-39

GYAPD3000V1 InGaAs Avalanche Photodiode 3000um MPD Chip TO CAN

Large-area InGaAs avalanche photodetector, 5000 μm diameter, TO-8 package, apply to LD’s monitor PD in optical fiber communication

GYMPD5000V1 InGaAs 5000μm MPD Chip(TO 8)