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Ф3mm 300~1100nm silicon avalanche photodiode UV enhanced TO5-e
The photodiode material is silicon, and the response spectrum is 300-1100nm,UV enhancement at 355nm.
Model：YB-SIAPD3000UV1
Contact：
Huang
Email: Hqy@ybphotonics.com
Huang
Email: Hqy@ybphotonics.com
Product Info
Introduction
The photodiode material is silicon, and the response spectrum is 300-1100nm; UV enhancement at 355nm; with a large target surface of 3000um, it is very suitable for doing low light detection, fluorescence detection and other applications.
Manuals
Ф3mm 355nm silicon avalanche photodiode.pdf download
Applications
Laser range finder,Laser alarming,RADAR,etc. application.
The features
- Top illumination planar APD
- High operation frequency,High multiplication gain
Specifications
Parameter Symbol Test Condition Min. Typ. Max. Unit Response Spectrum λ 一 300~1100 nm Photosensitive diameter ∅ 一 3000 μm Responsivity Re λ=355nm,φe=1μw, VR=10V 一 0.22 一 A/W λ=355nm,φe=1μw, VR=80V 一 6.75 一 Dark Current ID VR=0.9VBR 一 15 50 nA Total capacitance Ctot VR=0.9VBR,f=1MHz 一 50 一 pF Reverse Breakdown Voltage VBR IR=10uA 80 200 V Temperature coefficient of VBR δ Tc=-40℃～85℃ 一 0.4 一 V/C
The photodiode material is silicon, and the response spectrum is 300-1100nm; UV enhancement at 355nm; with a large target surface of 3000um, it is very suitable for doing low light detection, fluorescence detection and other applications.
ManualsФ3mm 355nm silicon avalanche photodiode.pdf download
Applications
Laser range finder,Laser alarming,RADAR,etc. application.
The features
- Top illumination planar APD
- High operation frequency,High multiplication gain
Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Response Spectrum | λ | 一 | 300~1100 | nm | ||
| Photosensitive diameter | ∅ | 一 | 3000 | μm | ||
| Responsivity | Re | λ=355nm,φe=1μw, VR=10V | 一 | 0.22 | 一 | A/W |
| λ=355nm,φe=1μw, VR=80V | 一 | 6.75 | 一 | |||
| Dark Current | ID | VR=0.9VBR | 一 | 15 | 50 | nA |
| Total capacitance | Ctot | VR=0.9VBR,f=1MHz | 一 | 50 | 一 | pF |
| Reverse Breakdown Voltage | VBR | IR=10uA | 80 | 200 | V | |
| Temperature coefficient of VBR | δ | Tc=-40℃～85℃ | 一 | 0.4 | 一 | V/C |
Product Inquiry
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