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400～1100nm Si 800μm APD Chip 1064nm enhanced
400～1100nm Si APD 1064 enhanced TO46
Model：YB-SIAPD800A1
Tags：
Si APD Chip
1064 APD
Contact：
Huang
Email: Hqy@ybphotonics.com
Huang
Email: Hqy@ybphotonics.com
Product Info
Introduction
Silicon avalanche photodetector, 1064 enhanced, 800um photosensitive, TO package, suitable for LIDAR and other applications.
Download
Si 800μm 1064nm APD Chip.pdf download
Applications
Laser range finder,Laser alarming,RADAR,etc. application.
Specifications
Parameter Symbol Test Condition Min. Typ. Max. Unit Response Spectrum λ 一 400～1100 nm Photosensitive diameter ∅ 一 800 μm Responsivity Re λ=1064nm,φe=1μw, M=100 30 36 一 A/W Response time ts f=1MHz,RL=50Ω,λ=1064nm 一 2.0 一 ns Dark Current ID M=100 一 5.0 12.0 nA Total capacitance Ctot M=100,f=1MHz 一 2.5 4.0 pF Reverse Breakdown Voltage VBR IR =10μA 350 一 460 V Temperature coefficient of VBR δ Tc=-40℃～85℃ 一 2.4 3.0 V/℃
Silicon avalanche photodetector, 1064 enhanced, 800um photosensitive, TO package, suitable for LIDAR and other applications.
Download
Si 800μm 1064nm APD Chip.pdf download
Applications
Laser range finder,Laser alarming,RADAR,etc. application.
Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Response Spectrum | λ | 一 | 400～1100 | nm | ||
| Photosensitive diameter | ∅ | 一 | 800 | μm | ||
| Responsivity | Re | λ=1064nm,φe=1μw, M=100 | 30 | 36 | 一 | A/W |
| Response time | ts | f=1MHz,RL=50Ω,λ=1064nm | 一 | 2.0 | 一 | ns |
| Dark Current | ID | M=100 | 一 | 5.0 | 12.0 | nA |
| Total capacitance | Ctot | M=100,f=1MHz | 一 | 2.5 | 4.0 | pF |
| Reverse Breakdown Voltage | VBR | IR =10μA | 350 | 一 | 460 | V |
| Temperature coefficient of VBR | δ | Tc=-40℃～85℃ | 一 | 2.4 | 3.0 | V/℃ |
Product Inquiry
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