<
>
400-1100nm Si-PD Photodiode Devices
Coaxial Si-PD Photodiode Devices 400-1100nm; High responsivity, Low dark current, Low capacitance
Model：PD-RA-2HBR-BG-Si
Tags：
Photodiode
Si-PIN
Contact：
Huang
Email: Hqy@ybphotonics.com
Huang
Email: Hqy@ybphotonics.com
Product Info
Introduction
400-1100nm Si PIN Photodiode 200um
Features
- High responsivity
- Low dark current, Low capacitance
- Plug-in structure
- Laser Welding, High reliability And Long operation life
Absolute Maximum Ratings (Tc=25℃)
Parameter Symbol Min Type Max Unit Saturated optical power Ps 5 mW Forward Current If 5 mA Reverse Voltage Vr 5 15 V Operating Case Temperature Top -40 一 +85 ℃ Storage Temperature Tstg -40 一 +85 ℃ Lead Soldering(Temperature/Time) 260/10 or 360/5 oC/Sec
Optical and Electrical Characteristics (Tc=25℃)
Parameter Symbol Min. Type Max. Unit Test condition Active Area φ 一 200 一 μm Operating Wavelength λ 400 1100 nm Responsivity Res 0.17 一 一 AW Vr=10V,λ=405nm 0.30 一 一 AW Vr=10V,λ=650nm 0.46 一 一 A/W Vr=10V,λ=850nm 0.08 一 一 AW Vr=10V,λ=1064nm Dark Current ld 一 0.1 1.0 nA Vr=10V Reverse Breakdown voltage VBR 一 一 60 V |=10uA Junction Capacitance CJ 一 1.0 pF Vr=10V,f=1MHz Response time TR 一 150 pS Vr=10V,50Ω Bandwidth(-3dB) Bw 一 2.5 一 GHz Vr=10V,50Ω Shunt resistance
Rsh
一
一
100
GΩ
Vr=10mV
Outline Diagram and Pin Assignments
Order Information
PD-RA-2HBR-BG-Si
400-1100nm Si PIN Photodiode 200um
Features
- High responsivity
- Low dark current, Low capacitance
- Plug-in structure
- Laser Welding, High reliability And Long operation life
Absolute Maximum Ratings (Tc=25℃)
| Parameter | Symbol | Min | Type | Max | Unit |
|---|---|---|---|---|---|
| Saturated optical power | Ps | 5 | mW | ||
| Forward Current | If | 5 | mA | ||
| Reverse Voltage | Vr | 5 | 15 | V | |
| Operating Case Temperature | Top | -40 | 一 | +85 | ℃ |
| Storage Temperature | Tstg | -40 | 一 | +85 | ℃ |
| Lead Soldering(Temperature/Time) | 260/10 or 360/5 | oC/Sec |
Optical and Electrical Characteristics (Tc=25℃)
| Parameter | Symbol | Min. | Type | Max. | Unit | Test condition |
|---|---|---|---|---|---|---|
| Active Area | φ | 一 | 200 | 一 | μm | |
| Operating Wavelength | λ | 400 | 1100 | nm | ||
| Responsivity | Res | 0.17 | 一 | 一 | AW | Vr=10V,λ=405nm |
| 0.30 | 一 | 一 | AW | Vr=10V,λ=650nm | ||
| 0.46 | 一 | 一 | A/W | Vr=10V,λ=850nm | ||
| 0.08 | 一 | 一 | AW | Vr=10V,λ=1064nm | ||
| Dark Current | ld | 一 | 0.1 | 1.0 | nA | Vr=10V |
| Reverse Breakdown voltage | VBR | 一 | 一 | 60 | V | |=10uA |
| Junction Capacitance | CJ | 一 | 1.0 | pF | Vr=10V,f=1MHz | |
| Response time | TR | 一 | 150 | pS | Vr=10V,50Ω | |
| Bandwidth(-3dB) | Bw | 一 | 2.5 | 一 | GHz | Vr=10V,50Ω |
| Shunt resistance | Rsh | 一 | 一 | 100 | GΩ | Vr=10mV |
Outline Diagram and Pin Assignments
Order Information
PD-RA-2HBR-BG-Si
Product Inquiry
Leading manufacturer of photodetector modules and fiber optic sensing system modules