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InGaAs Avalanche Photodiode 500um APD Chip
ingaas avalanche photodiode, Φ 500μm, used for Distance measurement, Spatial light transmission, available in bare die, TO-CAN, pigtail, flange and other packages.
Model：GYAPD500V1
Contact：
Huang
Email: Hqy@ybphotonics.com
Huang
Email: Hqy@ybphotonics.com
Product Info
Introduction
This is a 500um diameter InGaAs APD photodetector, the wavelength range is 950-1700nm, Respondsivity at 1550nm is 0.9A/W, bandwidth 450MHz, we can provide die, but also according to customer packaging requirements for chip packaging, such as (TO package, pigtail package, etc.)
Applications
- Distance measurement
- Spatial light transmission
- OTDR
- Low-light-level detection
Absolute Maximum Rating
Parameter Symbol Min. Max. Unit APD voltage supply VPD —— VBR V Operating Temperature TC -40 +85 ⁰C Storage Temperature TSTG -55 +125 ⁰C Forward Current IF —— 5 mA Reverse Current IR —— 3 mA
Electro-Optical Characteristics （@ Tc=22±3℃）
Parameter Symbol Test Condition Min. Typ. Max. Unit Response Spectrum λ —— 950 ~ 1700 nm Responsivity Re λ=1550nm Pin=1 μW, M=1 0.80 0.95 —— A/W Multiplication factor M λ=1550nm Pin=1 μW, VR=VBR-3 10.00 —— —— —— Multiplication factor M λ=1550nm Pin=1 μW, VR=VBR-2 20.00 —— —— —— Multiplication factor M λ=1550nm Pin=1 μW, VR=VBR-1 30.00 —— —— —— Dark Current Id VR=VBR-3, Pin=0 μW —— 50.00 100.00 nA -3dB cut-off frequency BW M=10 RL=50Ω 0.25 0.45 —— GHz Reverse Breakdown Voltage VBR IR =10μA, Pin=0μW 40.00 —— 60.00 V Capacitance C VR=VBR-3, f=1MHz —— 6.00 8.00 pF Temperature coefficient of VBR γ R=10μA, Pin=0μW -55℃～+85℃ 0.05 0.12 0.15 V/℃
Typical Performance Curves
Outline Diagram & Die Dimensions
This is a 500um diameter InGaAs APD photodetector, the wavelength range is 950-1700nm, Respondsivity at 1550nm is 0.9A/W, bandwidth 450MHz, we can provide die, but also according to customer packaging requirements for chip packaging, such as (TO package, pigtail package, etc.)
Applications
- Distance measurement
- Spatial light transmission
- OTDR
- Low-light-level detection
Absolute Maximum Rating
| Parameter | Symbol | Min. | Max. | Unit |
|---|---|---|---|---|
| APD voltage supply | VPD | —— | VBR | V |
| Operating Temperature | TC | -40 | +85 | ⁰C |
| Storage Temperature | TSTG | -55 | +125 | ⁰C |
| Forward Current | IF | —— | 5 | mA |
| Reverse Current | IR | —— | 3 | mA |
Electro-Optical Characteristics （@ Tc=22±3℃）
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Response Spectrum | λ | —— | 950 ~ 1700 | nm | ||
| Responsivity | Re | λ=1550nm Pin=1 μW, M=1 | 0.80 | 0.95 | —— | A/W |
| Multiplication factor | M | λ=1550nm Pin=1 μW, VR=VBR-3 | 10.00 | —— | —— | —— |
| Multiplication factor | M | λ=1550nm Pin=1 μW, VR=VBR-2 | 20.00 | —— | —— | —— |
| Multiplication factor | M | λ=1550nm Pin=1 μW, VR=VBR-1 | 30.00 | —— | —— | —— |
| Dark Current | Id | VR=VBR-3, Pin=0 μW | —— | 50.00 | 100.00 | nA |
| -3dB cut-off frequency | BW | M=10 RL=50Ω | 0.25 | 0.45 | —— | GHz |
| Reverse Breakdown Voltage | VBR | IR =10μA, Pin=0μW | 40.00 | —— | 60.00 | V |
| Capacitance | C | VR=VBR-3, f=1MHz | —— | 6.00 | 8.00 | pF |
| Temperature coefficient of VBR | γ | R=10μA, Pin=0μW -55℃～+85℃ | 0.05 | 0.12 | 0.15 | V/℃ |
Typical Performance Curves
Outline Diagram & Die Dimensions
Product Inquiry
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