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InGaAs 5000μm MPD Chip(TO 8)
InGaAs;photodiode;5000μm;5mm;TO-8;APD chip;avalanche Photodiode
Model： GYMPD5000V1
Contact：
Huang
Email: Hqy@ybphotonics.com
Huang
Email: Hqy@ybphotonics.com
Introduction
Large-area InGaAs avalanche photodetector, 5000 μm diameter, TO-8 package, apply to LD’s monitor PD in optical fiber communication
Features
- High sensitivity
- Low capacitance
- Low dark current
- Large detection area
Product Specifications
Electro-optical Characteristics
Electro-optical Specifications @ 22±3℃
Parameter Test Condition Min. Typ. Max. Unit Responsivity1 λ=1310nm 0.90 0.98 —— A/W Responsivity2 λ=1550nm 0.95 1.10 —— A/W Dark Current V=-1V —— 3.20 15.00 nA V=-5V —— 7.00 35.00 nA Breakdown Voltage I=-10µA 40.00 —— —— V Capacitance V=-2V,f=1MHz —— 1.10 1.50 nF V=-5V,f=1MHz —— 0.91 1.16 nF Forward Voltage I=1mA —— 0.35 0.70 V
Dimensions
As shown in Figure 1
Parameter Min. Typ. Max. Unit Notes Die Width 5190 5200 5210 µm Die Length 5190 5200 5210 µm Detection Window —— 5000 —— µm Thickness 190 200 210 µm Bonding Pad Diameter —— 150 —— µm For p-pad
Figure 1
Absolute Maximum Rating
Parameter Rating Reverse Current -10mA Forward Current 10mA Optical Power Input 10mW Operating Temperature -40 to 85 oC Storage Temperature -40 to 125 oC
Attention: Handle with care, InP is a brittle material. The device can be permanently damaged when exposed to ESD.
Specifications are subject to change without notice
Large-area InGaAs avalanche photodetector, 5000 μm diameter, TO-8 package, apply to LD’s monitor PD in optical fiber communication
Features
- High sensitivity
- Low capacitance
- Low dark current
- Large detection area
Product Specifications
Electro-optical Characteristics
Electro-optical Specifications @ 22±3℃
| Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Responsivity1 | λ=1310nm | 0.90 | 0.98 | —— | A/W |
| Responsivity2 | λ=1550nm | 0.95 | 1.10 | —— | A/W |
| Dark Current | V=-1V | —— | 3.20 | 15.00 | nA |
| V=-5V | —— | 7.00 | 35.00 | nA | |
| Breakdown Voltage | I=-10µA | 40.00 | —— | —— | V |
| Capacitance | V=-2V,f=1MHz | —— | 1.10 | 1.50 | nF |
| V=-5V,f=1MHz | —— | 0.91 | 1.16 | nF | |
| Forward Voltage | I=1mA | —— | 0.35 | 0.70 | V |
Dimensions
As shown in Figure 1
| Parameter | Min. | Typ. | Max. | Unit | Notes |
|---|---|---|---|---|---|
| Die Width | 5190 | 5200 | 5210 | µm | |
| Die Length | 5190 | 5200 | 5210 | µm | |
| Detection Window | —— | 5000 | —— | µm | |
| Thickness | 190 | 200 | 210 | µm | |
| Bonding Pad Diameter | —— | 150 | —— | µm | For p-pad |
Figure 1
Absolute Maximum Rating
| Parameter | Rating |
|---|---|
| Reverse Current | -10mA |
| Forward Current | 10mA |
| Optical Power Input | 10mW |
| Operating Temperature | -40 to 85 oC |
| Storage Temperature | -40 to 125 oC |
Attention: Handle with care, InP is a brittle material. The device can be permanently damaged when exposed to ESD.
Specifications are subject to change without notice
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