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InGaAs APD Photodiodes Φ200μm 950-1700nm TO-CAN
InGaAs APD photodetector, Φ 200μm, used for LIDAR, low light detection, available in bare die, TO-CAN, pigtail, flange and other packages.
Model：GYAPD200V1
Tags：
apd photodetector
avalanche photodetector
avalance photodiode
apd photodiode
apd avalanche photodiode
Contact：
Huang
Email: Hqy@ybphotonics.com
Huang
Email: Hqy@ybphotonics.com
Product Info
Introduction
InGaAs APD avalanche photodetector, wavelength: 950-1700nm; diameter Φ 200μm, used for distance measurement, spatial light transmission, LIDAR, low light detection, available in bare chip, TO-CAN, pigtail, flange and other packaging forms.
Applications
- Distance measurement
- Spatial light transmission
- OTDR
- Low-light-level detection
Absolute Maximum Rating
Parameter Symbol Min. Max. Unit voltage supply VPD —— VBR V Operating Temperature TC -40 +85 ⁰C Storage Temperature TSTG -55 +125 ⁰C Forward Current IF —— 5 mA Reverse Current IR —— 3 mA
Electro-Optical Characteristics （@ Tc=22±3℃）
Parameter Symbol Test Condition Min. Typ. Max. Unit Response Spectrum λ —— 950 ~ 1700 nm Responsivity Re λ=1550nm Pin=1μW, M=1 0.90 1.00 —— A/W Multiplication factor M λ=1550nm Pin=1μW, VR=VBR-3 10.00 —— —— —— Multiplication factor M λ=1550nm Pin=1μW, VR=VBR-1 30.00 —— —— —— Dark Current Id VR=VBR-3, Pin=0μW —— 8.00 50.00 nA -3dB cut-off frequency BW M=10 RL=50Ω 0.60 1.25 —— GHz Reverse Breakdown Voltage VBR IR =10μA, Pin=0μW 35.00 —— 50.00 V Capacitance C VR=VBR-3, f=1MHz —— 1.80 2.00 pF Temperature coefficient of VBR γ R=10μA, Pin=0μW -55℃～+85℃ 0.05 0.11 0.15 V/℃
Typical Performance Curves
Outline Diagram & Die Dimensions
TO46 Package
InGaAs APD avalanche photodetector, wavelength: 950-1700nm; diameter Φ 200μm, used for distance measurement, spatial light transmission, LIDAR, low light detection, available in bare chip, TO-CAN, pigtail, flange and other packaging forms.
Applications
- Distance measurement
- Spatial light transmission
- OTDR
- Low-light-level detection
Absolute Maximum Rating
| Parameter | Symbol | Min. | Max. | Unit |
|---|---|---|---|---|
| voltage supply | VPD | —— | VBR | V |
| Operating Temperature | TC | -40 | +85 | ⁰C |
| Storage Temperature | TSTG | -55 | +125 | ⁰C |
| Forward Current | IF | —— | 5 | mA |
| Reverse Current | IR | —— | 3 | mA |
Electro-Optical Characteristics （@ Tc=22±3℃）
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Response Spectrum | λ | —— | 950 ~ 1700 | nm | ||
| Responsivity | Re | λ=1550nm Pin=1μW, M=1 | 0.90 | 1.00 | —— | A/W |
| Multiplication factor | M | λ=1550nm Pin=1μW, VR=VBR-3 | 10.00 | —— | —— | —— |
| Multiplication factor | M | λ=1550nm Pin=1μW, VR=VBR-1 | 30.00 | —— | —— | —— |
| Dark Current | Id | VR=VBR-3, Pin=0μW | —— | 8.00 | 50.00 | nA |
| -3dB cut-off frequency | BW | M=10 RL=50Ω | 0.60 | 1.25 | —— | GHz |
| Reverse Breakdown Voltage | VBR | IR =10μA, Pin=0μW | 35.00 | —— | 50.00 | V |
| Capacitance | C | VR=VBR-3, f=1MHz | —— | 1.80 | 2.00 | pF |
| Temperature coefficient of VBR | γ | R=10μA, Pin=0μW -55℃～+85℃ | 0.05 | 0.11 | 0.15 | V/℃ |
Typical Performance Curves
Outline Diagram & Die Dimensions
TO46 Package
Product Inquiry
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