1100-1654nm InGaAs photodiode,Square flange package,More space-saving, suitable for optoelectronic module integration.
The chip is a PIN-type photodetector made of InGaAs material, responding to near-infrared light 1100-1650nm, in a square metal flange package with FC/APC interface, suitable for integration in housing structures such as modules.
1100-1654nm InGaAs PD Devices.pdf download
Parameter | Symbol | Min. | Type | Max. | Unit | Test condition |
---|---|---|---|---|---|---|
Active Area | φ | - | 70 | - | μm | |
Operating Wavelength | λ | 1100 | - | 1650 | nm | |
Responsivity | R | 0.85 | 0.90 | - | A/W | Vr=5V,λ=1310nm |
Dark Current | Id | - | - | 1 | nA | Vr=5V |
Capacitance | C | - | - | 0.75 | pF | Vr=5V,f=1MHz,case open |
Rise time/Fall time | Tr/Tf | - | - | 0.5 | ns | Vr=5V,10~90% |
Bandwidth | Bw | 1.25 | - | - | GHz | Vr=5V,50Ωload with lead length=6mm,case open |