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The photodiode material is silicon, and the response spectrum is 300-1100nm; UV enhancement at 355nm; with a large target surface of 3000um, it is very suitable for doing low light detection, fluorescence detection and other applications.

Ф3mm 300~1100nm silicon avalanche photodiode UV enhanced TO5-e

800μm, 500μm, 230μm photosensitive surface;Laser distance measurement, laser warning, LIDAR and other applications.

Silicon Avalanche Photodiode 400-1100nm Peak wavelength 905nm

Silicon avalanche photodetector, 1064 enhanced, 800um photosensitive, TO package, suitable for LIDAR and other applications.

400～1100nm Si 800μm APD Chip 1064nm enhanced

The chip is a PIN-type photodetector made of InGaAs material, responding to near-infrared light 1100-1650nm, in a square metal flange package with FC/APC interface, suitable for integration in housing structures such as modules.

InGaAs PIN Photodiode FC Flange 1100-1654nm

900-2600nm InGaAs PD Wide dynamic range, High Responsibility,Low Dark Current,Standard To-46 package.

900-2600nm InGaAs Extended Photodiode TO-CAN

The G-1550-200-L-D-T-AA-G3-T-L is 1550nm fiber-coupled acousto-optic modulator(AOM), Frequency 200Mhz, deal for fiber optic sensing system applications.

Acousto-Optic Modulator 1550nm Frequency 200Mhz Rise Time 10ns

The detector is based on a silicon-based avalanche photodiode with 1064 nm enhanced response and high gain response for atmospheric aerosol radar

1064nm APD avalanche detector for lidar, atmospheric aerosol detection

ASE Broadband Light Source, C-band 1528-1563nm, 20mW/50mW.

ASE Broadband Light Source

PN12 high precision regulated linear power supply ±12VDC, voltage ripple Vpp 5mV, suitable for powering photodetectors and other precision instruments.

Linear Power Supply ±12VDC Vpp 5mV 200mA

PDA60A2 photodetector based on 6x6mm large size target surface photodiode, response wavelength 320-1100nm, bandwidth DC-10MHz, With amplifier circuit with 10^3 gain.

PDA60A2 Si Free Space Photodetector 6x6mm 320-1100nm 10MHz

Small signal EDFA erbium-doped fiber amplifier is used to amplify weak light signals or as a preamplifier for weak light detection, and is widely used in fiber optic sensing systems and fiber optic communication network systems.

Small signal erbium-doped fiber amplifier EDFA pre-amplification C-band

Pulsed EDFA erbium-doped fiber amplifier, C-band, commonly used after the acousto-optic modulator to achieve the amplification of pulsed optical signals, common in distributed fiber optic sensing systems, LIDAR and other applications.

Pulsed EDFA Erbium-doped fiber amplifier Pulsed signal amplification C-band

The module integrates both an EDFA erbium-doped fiber amplifier and a Raman fiber amplifier inside the module, which significantly reduces system complexity, increases reliability, and reduces size compared to conventional EDFA and Raman amplification systems. The front-end EDFA is available as a pulsed EDFA or an amplified EDFA suitable for ultra-long-range fiber optic sensing systems or high-speed fiber optic communication systems.

EDFA & Raman Integrated Amplification Module 1550nm Fiber Optic Sensing DVS DAS

High-speed photodetectors, 800nm to 1650nm, bandwidths from 6G to 24G, with DC or AC coupling options. Suitable for high speed photodetection.

ghz photodiode analog optical receiver with pigtail

This is DC-40G analog photodetector, Small size package, High responsivity: typical 0.75 mA/mW@ 1550nm, for antenna remote control, satellite communication, distributed antenna system, high speed test and measurement, Video Signal Distribution in HFC and FTTx Nodes, Wireless signal transport and other applications.

40Ghz Analog Photodetector 1100nm-1620nm

InGaAs APD avalanche photodetector, wavelength: 950-1700nm; diameter Φ 200μm, used for distance measurement, spatial light transmission, LIDAR, low light detection, available in bare chip, TO-CAN, pigtail, flange and other packaging forms.

InGaAs APD Photodiodes Φ200μm 950-1700nm TO-CAN

This is a 500um diameter InGaAs APD photodetector, the wavelength range is 950-1700nm, Respondsivity at 1550nm is 0.9A/W, bandwidth 450MHz, we can provide die, but also according to customer packaging requirements for chip packaging, such as (TO package, pigtail package, etc.)

InGaAs Avalanche Photodiode 500um APD Chip

The center wavelength 1550nm ultra-narrow line width single frequency laser is a combination of silicon photonic chip technology, ECL laser technology and advanced packaging technology into a high-performance semiconductor laser products.

1550nm ultra-narrow linewidth single frequency laser ≤2kHz

The series of products are based on the standard packaging platform of the Institute of Optoelectronic Integrated Microsystems, Tsinghua University, and use sealed inorganic butterfly device packaging technology

1550nm Butterfly SOA 14PIN

Ultra-narrow linewidth (≤100 kHz), single-frequency center wavelength 1550nm, supports any wavelength customization in C-band, 14Pin butterfly package.

1550nm Narrow Linewidth Semiconductor Laser 100kHz 70mW DFB Butterfly Package

FSW-1×4 multi-mode optical switching module is a device with the role of optical path switching

FSW-1×4 Multimode Optical Switch Module

MEMS 1×N optical switch module can be used in fiber optic sensing and monitoring, instrumentation, metro network and other applications.

MEMS 1×N Optical Switch Module

DET40 Free-Space Bias Photodetector

The balanced photodetector contains two photodiodes and a low-noise transimpedance amplifier, in which the two photodiodes are matched to each other for excellent common mode rejection ratio

DAS-BPD Balanced Photodetector Coherent Detection Applications

PDLX Long Wavelength Photodetector

[ Acceleration ] Fiber Optic Grating Acceleration Sensor

Fiber Optic Grating Earth Pressure Sensor

Fiber Optic Grating Displacement Sensor

Fiber Optic Grating Tilt Sensor

Fiber Optic Grating Temperature Sensors