APD430T Avalanche Photodetector
APD430T;Photodetector;Si;InGaAs;400-1700nm
Huang
Email: Hqy@ybphotonics.com
Introduction
APD430T temp-compensated APDs include Si & InGaAs types, 10–400MHz bandwidth, optional adjustable gain, ideal for LiDAR and weak light detection.
1. Overview
Avalanche photodiodes (APD) are designed to offer higher sensitivity and lower noise than standard PIN diodes, making them ideal for applications at low light power levels. In addition to standard APDs, we also offer versions with variable gain (i.e., M-factor).
Generally speaking, avalanche photodiodes utilize an internal gain mechanism to increase sensitivity. A high reverse bias is applied to the diode to generate a strong electric field. When an incident photon creates an electron-hole pair, the electric field accelerates the electron, resulting in the emission of secondary electrons through collision ionization. The resulting electron avalanche produces a gain factor of several hundred, denoted by the multiplication factor M, which is a function of reverse bias and temperature. Generally, the M factor increases as temperature decreases and decreases as temperature increases. Similarly, the M factor increases as the reverse bias voltage increases and decreases as the reverse bias voltage decreases.
The APD430T integrates a thermistor that adjusts the bias voltage to compensate for the effect of temperature changes on the M factor. In addition to temperature compensation, the optional adjustable-gain version allows the reverse bias voltage across the diode to be adjusted via a potentiometer on the back of the package to change the M factor.
2. Features
- Temperature compensation
- Optional adjustable gain
- Maximum bandwidth up to 400 MHz
- 30 mm optical cage system
3. Applications
- Detection of weak light signals
- LiDAR
4.Specifications
Model APD430A-10M-T APD430A-50M-T APD430A-200M-T APD430A-400M-T Material Si Wavelength Range 400-1100nm Diameter of Photosensitive Area 500um 230um Sensitivity 0.55A/W @ 850nm (M = 1) Bandwidth a DC-10MHz DC-50MHz DC-200MHz DC-400MHz Rise Time a 40ns 8ns 2ns 1ns Gain b 4.0x107V/W 8.0x106V/W 2.4x106V/W 1.0x106V/W Saturation Power 80nW 0.43uW 1.2uW 2.9uW Noise Voltage a 20mVpp 20mVpp 20mVpp 20mVpp Maximum Output Voltage b 3.2V 3.2V 3.2V 3.2V Equivalent Noise Power 0.07pW/√Hz 0.12pW/√Hz 0.15pW/√Hz 0.30pW/√Hz
Model APD430C-10M-T APD430C-50M-T APD430C-200M-T APD430C-400M-T Material InGaAs Wavelength Range 1000-1700nm Diameter of Photosensitive Area 500um 200um Sensitivity 0.9A/W @ 1550nm (M = 1) Bandwidth a DC-10MHz DC-50MHz DC-200MHz DC-400MHz Rise Time a 40ns 8ns 2ns 1ns Gain b 1.0x107V/W 2.0x106V/W 8.0x105V/W 3.6x105V/W Saturation Power 0.32uW 1.6uW 4.0uW 8.3uW Noise Voltage a 20mVpp 20mVpp 20mVpp 20mVpp Maximum Output Voltage b 3.2V 3.2V 3.2V 3.2V Equivalent Noise Power 0.13pW/√Hz 0.24pW/√Hz 0.42pW/√Hz 0.94pW/√Hz
General Sensor Parameters Typical Values Operating Voltage 9V Operating Current <200mA Output Impedance 50Ω Output Coupling Method DC Output Connector SMA female Operating Temperature -10~65℃ Storage Temperature -40~85℃
Notes:
a For a 50Ω load
b For a high-impedance load
5. Response Curve
Note: The response curve shows typical values and is for reference only.
6.Model Description
Detector Model Naming Convention: Detector Series-Bandwidth-T-SM1-ADJ
Example:
APD430A-50M-T indicates a 30mm cage structure.
APD430A-50M-T-SM1 indicates a structure with an SM1 external threaded connection.
APD430A-50M-T-SM1-ADJ indicates a structure with an SM1 external threaded connection and adjustable gain.
7.Machine Dimensions
30mm cage structure (default)
SM1 External Thread Design (Optional)
SM1 External Threaded Adjustable Gain Assembly (Optional)
8.Photosensitive Distance Diagram
30 mm Cage Structure (Default) SM1 External Thread Structure
Distance A Series A Series SM1 C Series C Series SM1 a= 6.35mm 2.35mm 6.61mm 2.61mm
9.Packing List
No. Item Qty Unit Remarks 1 Photodetector 1 Piece — 2 Power Adapter 1 Piece 9 V 3 SMA-to-BNC RF Cable 1 Piece —
APD430T temp-compensated APDs include Si & InGaAs types, 10–400MHz bandwidth, optional adjustable gain, ideal for LiDAR and weak light detection.
1. Overview
Avalanche photodiodes (APD) are designed to offer higher sensitivity and lower noise than standard PIN diodes, making them ideal for applications at low light power levels. In addition to standard APDs, we also offer versions with variable gain (i.e., M-factor).
Generally speaking, avalanche photodiodes utilize an internal gain mechanism to increase sensitivity. A high reverse bias is applied to the diode to generate a strong electric field. When an incident photon creates an electron-hole pair, the electric field accelerates the electron, resulting in the emission of secondary electrons through collision ionization. The resulting electron avalanche produces a gain factor of several hundred, denoted by the multiplication factor M, which is a function of reverse bias and temperature. Generally, the M factor increases as temperature decreases and decreases as temperature increases. Similarly, the M factor increases as the reverse bias voltage increases and decreases as the reverse bias voltage decreases.
The APD430T integrates a thermistor that adjusts the bias voltage to compensate for the effect of temperature changes on the M factor. In addition to temperature compensation, the optional adjustable-gain version allows the reverse bias voltage across the diode to be adjusted via a potentiometer on the back of the package to change the M factor.
2. Features
- Temperature compensation
- Optional adjustable gain
- Maximum bandwidth up to 400 MHz
- 30 mm optical cage system
3. Applications
- Detection of weak light signals
- LiDAR
4.Specifications
| Model | APD430A-10M-T | APD430A-50M-T | APD430A-200M-T | APD430A-400M-T |
|---|---|---|---|---|
| Material | Si | |||
| Wavelength Range | 400-1100nm | |||
| Diameter of Photosensitive Area | 500um | 230um | ||
| Sensitivity | 0.55A/W @ 850nm (M = 1) | |||
| Bandwidth a | DC-10MHz | DC-50MHz | DC-200MHz | DC-400MHz |
| Rise Time a | 40ns | 8ns | 2ns | 1ns |
| Gain b | 4.0x107V/W | 8.0x106V/W | 2.4x106V/W | 1.0x106V/W |
| Saturation Power | 80nW | 0.43uW | 1.2uW | 2.9uW |
| Noise Voltage a | 20mVpp | 20mVpp | 20mVpp | 20mVpp |
| Maximum Output Voltage b | 3.2V | 3.2V | 3.2V | 3.2V |
| Equivalent Noise Power | 0.07pW/√Hz | 0.12pW/√Hz | 0.15pW/√Hz | 0.30pW/√Hz |
| Model | APD430C-10M-T | APD430C-50M-T | APD430C-200M-T | APD430C-400M-T |
|---|---|---|---|---|
| Material | InGaAs | |||
| Wavelength Range | 1000-1700nm | |||
| Diameter of Photosensitive Area | 500um | 200um | ||
| Sensitivity | 0.9A/W @ 1550nm (M = 1) | |||
| Bandwidth a | DC-10MHz | DC-50MHz | DC-200MHz | DC-400MHz |
| Rise Time a | 40ns | 8ns | 2ns | 1ns |
| Gain b | 1.0x107V/W | 2.0x106V/W | 8.0x105V/W | 3.6x105V/W |
| Saturation Power | 0.32uW | 1.6uW | 4.0uW | 8.3uW |
| Noise Voltage a | 20mVpp | 20mVpp | 20mVpp | 20mVpp |
| Maximum Output Voltage b | 3.2V | 3.2V | 3.2V | 3.2V |
| Equivalent Noise Power | 0.13pW/√Hz | 0.24pW/√Hz | 0.42pW/√Hz | 0.94pW/√Hz |
| General Sensor Parameters | Typical Values |
|---|---|
| Operating Voltage | 9V |
| Operating Current | <200mA |
| Output Impedance | 50Ω |
| Output Coupling Method | DC |
| Output Connector | SMA female |
| Operating Temperature | -10~65℃ |
| Storage Temperature | -40~85℃ |
Notes:
a For a 50Ω load
b For a high-impedance load
5. Response Curve
Note: The response curve shows typical values and is for reference only.
6.Model Description
Detector Model Naming Convention: Detector Series-Bandwidth-T-SM1-ADJ
Example:
APD430A-50M-T indicates a 30mm cage structure.
APD430A-50M-T-SM1 indicates a structure with an SM1 external threaded connection.
APD430A-50M-T-SM1-ADJ indicates a structure with an SM1 external threaded connection and adjustable gain.
7.Machine Dimensions
30mm cage structure (default)
SM1 External Thread Design (Optional)
SM1 External Threaded Adjustable Gain Assembly (Optional)
8.Photosensitive Distance Diagram
30 mm Cage Structure (Default) SM1 External Thread Structure
| Distance | A Series | A Series SM1 | C Series | C Series SM1 |
|---|---|---|---|---|
| a= | 6.35mm | 2.35mm | 6.61mm | 2.61mm |
9.Packing List
| No. | Item | Qty | Unit | Remarks |
|---|---|---|---|---|
| 1 | Photodetector | 1 | Piece | — |
| 2 | Power Adapter | 1 | Piece | 9 V |
| 3 | SMA-to-BNC RF Cable | 1 | Piece | — |
FAQ
-
Q：Do you have an unboxing picture of the photodetector?
A：When you buy our photodetectors, we will deliver SMA to BNC RF cable, and power supply for free. -
Q: What are the advantages of your photodetectors compared to Thorlabs?
A: We support custom development and we offer better prices. -
Q: What is the lead time for photodetector modules?
A: Basically, we have more than 90% of detectors in stock, only a few models need 3 weeks lead time. -
Q: Do you support the sale of those countries, and is the shipping included?
A: Our service is available worldwide, regardless of country or region. Shipping is included. -
Q: Who are your typical customers?
A: More than 100 top universities and research institutes in China have chosen us and given us high evaluations, such as: Chinese Academy of Sciences, CEC, Tsinghua University, Peking University and other clients.
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