300-1000nm UV-enhanced Free-space Avalanche Photodetector
APD Avalanche Photodetector Free-space
Huang
Email: Hqy@ybphotonics.com
Product Info
Introduction
APD12702 Series: Temperature compensation, UV-enhanced sensitivity, 3mm photosensitive area. Ideal for low-light signals, fluorescence measurement, and chemical analysis.
1.Overview
Avalanche Photodetectors (APD) are designed to deliver higher sensitivity and lower noise compared to standard PIN photodetectors, making them ideal for low optical power-level applications. In addition to standard APD, we also offer versions with adjustable gain (i.e., M-factor).
Generally, avalanche photodiodes utilize an internal gain mechanism to enhance sensitivity. A high reverse bias voltage is applied to the diode to create a strong electric field. When incident photons generate an electron-hole pair, the electric field accelerates the electrons, triggering secondary electron generation through impact ionization. The resulting electron avalanche produces a gain factor of several hundred, represented by the multiplication factor MM, which is a function of reverse bias voltage and temperature. Typically, the MM-factor increases as temperature decreases and decreases as temperature rises. Similarly, the MM-factor rises with higher reverse bias voltage and falls with lower reverse bias voltage.
The APD12702 integrates a thermistor to adjust the bias voltage, compensating for the impact of temperature variations on the MM-factor.
2.Features
- Temperature Compensation
- UV enhancement
- Optional FC flange
- High sensitivity
- Large photosensitive size (3mm)
- 30mm optical cage system
3.APPLICATIONS
- Detection of weak light signals
- Fluorescence measurement
- Chemical analysis instruments
4.specification
Model APD12702A-40M APD12702A-80M Material Si Wavelength range 300-1000nm Light Sensitive Area Diameter 3mm Responsiveness @M=1 0.5A/W @ 800nm Bandwidth DC-40MHz DC-80MHz Rise Time 8.5ns 4.8ns Gain 1.8x104V/W 3.0x104V/W Saturated optical power 256uW 153uW Noise Voltage 5mVpp 8mVpp Maximum Output Voltage 4.6V 4.6V Noise equivalent power 5.56pW/√Hz 5.37pW/√Hz Operating Voltage 9V Operating current <200mA Output impedance 50Ω Output coupling method DC Output Connector SMA female Operating Temperature -10~65℃ Storage Temperature -40~85℃
Remarks:
a For high-resistance loads
5.Mechanical Dimension
6.Response curve
Note: Response curves are typical values for reference only.
7.Shipping list
NO Material Name Quantity Unit t Remarks 1 Photodetector 1 Pcs 2 Power adapter 1 Pcs 9V 3 SMA to BNC RF cable 1 Pcs
APD12702 Series: Temperature compensation, UV-enhanced sensitivity, 3mm photosensitive area. Ideal for low-light signals, fluorescence measurement, and chemical analysis.
1.Overview
Avalanche Photodetectors (APD) are designed to deliver higher sensitivity and lower noise compared to standard PIN photodetectors, making them ideal for low optical power-level applications. In addition to standard APD, we also offer versions with adjustable gain (i.e., M-factor).
Generally, avalanche photodiodes utilize an internal gain mechanism to enhance sensitivity. A high reverse bias voltage is applied to the diode to create a strong electric field. When incident photons generate an electron-hole pair, the electric field accelerates the electrons, triggering secondary electron generation through impact ionization. The resulting electron avalanche produces a gain factor of several hundred, represented by the multiplication factor MM, which is a function of reverse bias voltage and temperature. Typically, the MM-factor increases as temperature decreases and decreases as temperature rises. Similarly, the MM-factor rises with higher reverse bias voltage and falls with lower reverse bias voltage.
The APD12702 integrates a thermistor to adjust the bias voltage, compensating for the impact of temperature variations on the MM-factor.
2.Features
- Temperature Compensation
- UV enhancement
- Optional FC flange
- High sensitivity
- Large photosensitive size (3mm)
- 30mm optical cage system
3.APPLICATIONS
- Detection of weak light signals
- Fluorescence measurement
- Chemical analysis instruments
4.specification
| Model | APD12702A-40M | APD12702A-80M |
|---|---|---|
| Material | Si | |
| Wavelength range | 300-1000nm | |
| Light Sensitive Area Diameter | 3mm | |
| Responsiveness @M=1 | 0.5A/W @ 800nm | |
| Bandwidth | DC-40MHz | DC-80MHz |
| Rise Time | 8.5ns | 4.8ns |
| Gain | 1.8x104V/W | 3.0x104V/W |
| Saturated optical power | 256uW | 153uW |
| Noise Voltage | 5mVpp | 8mVpp |
| Maximum Output Voltage | 4.6V | 4.6V |
| Noise equivalent power | 5.56pW/√Hz | 5.37pW/√Hz |
| Operating Voltage | 9V | |
| Operating current | <200mA | |
| Output impedance | 50Ω | |
| Output coupling method | DC | |
| Output Connector | SMA female | |
| Operating Temperature | -10~65℃ | |
| Storage Temperature | -40~85℃ | |
Remarks:
a For high-resistance loads
5.Mechanical Dimension
6.Response curve
Note: Response curves are typical values for reference only.
7.Shipping list
| NO | Material Name | Quantity | Unit | t Remarks |
|---|---|---|---|---|
| 1 | Photodetector | 1 | Pcs | |
| 2 | Power adapter | 1 | Pcs | 9V |
| 3 | SMA to BNC RF cable | 1 | Pcs |
