‌300-1000nm UV-enhanced Free-space Avalanche Photodetector

1.Overview

Avalanche Photodetectors (APD) are designed to deliver higher sensitivity and lower noise compared to standard PIN photodetectors, making them ideal for low optical power-level applications. In addition to standard APD, we also offer versions with adjustable gain (i.e., M-factor).

Generally, avalanche photodiodes utilize an internal gain mechanism to enhance sensitivity. A high reverse bias voltage is applied to the diode to create a strong electric field. When incident photons generate an electron-hole pair, the electric field accelerates the electrons, triggering secondary electron generation through impact ionization. The resulting electron avalanche produces a gain factor of several hundred, represented by the multiplication factor MM, which is a function of reverse bias voltage and temperature. Typically, the MM-factor increases as temperature decreases and decreases as temperature rises. Similarly, the MM-factor rises with higher reverse bias voltage and falls with lower reverse bias voltage.

The APD12702 integrates a thermistor to adjust the bias voltage, compensating for the impact of temperature variations on the MM-factor.

2.Features

1. Temperature Compensation
2. UV enhancement
3. Optional FC flange
4. High sensitivity
5. Large photosensitive size (3mm)
6. 30mm optical cage system

3.APPLICATIONS

1. Detection of weak light signals
2. Fluorescence measurement
3. Chemical analysis instruments

4.specification

Remarks:

a For high-resistance loads

5.Mechanical Dimension

6.Response curve

Note: Response curves are typical values for reference only.

7.Shipping list