1064nm APD avalanche detector for lidar, atmospheric aerosol detection
The detector is based on a silicon-based avalanche photodiode with 1064 nm enhanced response and high gain response for atmospheric aerosol radar
Huang
Email: Hqy@ybphotonics.com
Product Info
Introduction
The detector is based on a silicon-based avalanche photodiode with 1064 nm enhanced response and high gain response for atmospheric aerosol radar
1. Overview
Avalanche Photodetectors (APDs) are designed to provide greater sensitivity and lower noise than standard PIN detectors and are well suited for low optical power level applications. We offer versions with variable gain (i.e. M-factor) in addition to the standard APD.
In general, avalanche photodiodes utilize an internal gain mechanism to increase sensitivity. A high reverse bias voltage is applied to the diode to create a strong electric field. When an incident photon creates an electron-hole pair, the electric field accelerates the electron, resulting in the creation of secondary electrons from collisional ionization. The resulting avalanche of electrons will produce a gain factor of several hundred times, denoted by the multiplication factor M, which is a function of reverse bias and temperature. In general, the M factor increases with decreasing temperature and decreases with increasing temperature. Similarly, the M factor will increase as the reverse bias voltage increases and decrease as the reverse bias voltage decreases.
The APD1064 has an integrated thermistor that adjusts the bias voltage to compensate for the effect that temperature changes have on the M-factor.
2. Features
- Temperature Compensation
- 1064nm enhancement
- Optional FC flange
- High sensitivity
- 30mm optical cage system
3.Applications
- Detection of ultra-weak light signals
- Atmospheric Aerosol Lidar
- Cloud Layer Analysis
- Sand and dust storm monitoring
4.Specifications
Items APD1064A-10M APD1064A-50M APD1064A-200M Materials Si Wavelength 400-1100nm Photosensitive diameter 0.8mm Responsivity @M=1 0.36A/W @ 1064nm Bandwidth（a） DC-10MHz DC-50MHz DC-200MHz Rise time（a） 40ns 8ns 2ns Gain (bc) 9.7x10^6V/W 1.9x10^6V/W 8x10^5V/W Saturated Optical power(c) 0.32uW 1.7uW 3.8uW Noise voltage (a) 18mVpp 18mVpp 18mVpp Maximum Output Voltage (b) 3.2V 3.2V 3.2V NEP 0.12pW/√Hz 0.23pW/√Hz 0.3pW/√Hz Operating voltage 9-12V Operating Current <200mA Output Impedance 50Ω Output coupling mode DC Output connector SMA female Operating temperature -10~65℃ Storage temperature -40~85℃
Remarks:
a For 50 ohm loads
b For high resistance loads
c 1064nm
5.Response curve
6. Mechanical dimensions
The detector is based on a silicon-based avalanche photodiode with 1064 nm enhanced response and high gain response for atmospheric aerosol radar
1. Overview
Avalanche Photodetectors (APDs) are designed to provide greater sensitivity and lower noise than standard PIN detectors and are well suited for low optical power level applications. We offer versions with variable gain (i.e. M-factor) in addition to the standard APD.
In general, avalanche photodiodes utilize an internal gain mechanism to increase sensitivity. A high reverse bias voltage is applied to the diode to create a strong electric field. When an incident photon creates an electron-hole pair, the electric field accelerates the electron, resulting in the creation of secondary electrons from collisional ionization. The resulting avalanche of electrons will produce a gain factor of several hundred times, denoted by the multiplication factor M, which is a function of reverse bias and temperature. In general, the M factor increases with decreasing temperature and decreases with increasing temperature. Similarly, the M factor will increase as the reverse bias voltage increases and decrease as the reverse bias voltage decreases.
The APD1064 has an integrated thermistor that adjusts the bias voltage to compensate for the effect that temperature changes have on the M-factor.
2. Features
- Temperature Compensation
- 1064nm enhancement
- Optional FC flange
- High sensitivity
- 30mm optical cage system
3.Applications
- Detection of ultra-weak light signals
- Atmospheric Aerosol Lidar
- Cloud Layer Analysis
- Sand and dust storm monitoring
4.Specifications
| Items | APD1064A-10M | APD1064A-50M | APD1064A-200M |
|---|---|---|---|
| Materials | Si | ||
| Wavelength | 400-1100nm | ||
| Photosensitive diameter | 0.8mm | ||
| Responsivity @M=1 | 0.36A/W @ 1064nm | ||
| Bandwidth（a） | DC-10MHz | DC-50MHz | DC-200MHz |
| Rise time（a） | 40ns | 8ns | 2ns |
| Gain (bc) | 9.7x10^6V/W | 1.9x10^6V/W | 8x10^5V/W |
| Saturated Optical power(c) | 0.32uW | 1.7uW | 3.8uW |
| Noise voltage (a) | 18mVpp | 18mVpp | 18mVpp |
| Maximum Output Voltage (b) | 3.2V | 3.2V | 3.2V |
| NEP | 0.12pW/√Hz | 0.23pW/√Hz | 0.3pW/√Hz |
| Operating voltage | 9-12V | ||
| Operating Current | <200mA | ||
| Output Impedance | 50Ω | ||
| Output coupling mode | DC | ||
| Output connector | SMA female | ||
| Operating temperature | -10~65℃ | ||
| Storage temperature | -40~85℃ | ||
Remarks:
a For 50 ohm loads
b For high resistance loads
c 1064nm
5.Response curve
6. Mechanical dimensions
