< >
  • PD10D-NIR  Amplified  Photodetector  Free-Space  Price  Specs

PD10D-NIR Amplified Photodetector Free-Space Price Specs


Previous Generation, View Alternatives

InGaAs Amplified Photodetector 900-1700nm Free-Space

Model:PD10D
Tags: PD10D-NIR Free-Space 800-1700nm Amplified Photodetector
Contact:face Huang Email: Hqy@ybphotonics.com
WhatsApp: +8613427781756 Web | App
Get a Quote

Product Info


Introduction

The series of photodetectors with 2mm large target surface photodetector chip has very high sensitivity, suitable for the response speed in the us level of photodetection equipment.

Download

ImagePD10D-spec.pdf  download

Features

  •  High temperature stability
  • Low noise, high gain
  • All metal shell, excellent shielding performance
  • 2mm Active Area Diameter

Application

  • Detect low light signals
  • Detection of laser pulses
  • Biochemical medical analysis instruments
  • RF and pulse waveform extraction from laser light sources

Specifications

Item
PD10D-NIR-10kPD10D-NIR-70kPD10D-NIR-200k
Materials
InGaAsInGaAsInGaAs
Wavelength 
900-1700nm900-1700nm900-1700nm
Input Connector
Free-SpaceFree-SpaceFree-Space
Responsiveness
0.9A/W @ 1550nm0.9A/W @ 1550nm0.9A/W @ 1550nm
Photosensitive diameter
1mm2mm2mm
Bandwidth
DC-10kHzDC-70kHzDC-200kHz
Rise time
35us5us1.8us
Cross-group gain
3kV/A1000kV/A100kV/A
Minimum optical power
-26.5dBm (2.22uw)-56.5dBm (2.22nw)-47.8dBm (16.6nw)
Saturated optical power
2.7dBm (1.85mw)-22.6dBm (5.55uw)-12.6dBm (55.5uw)
Noise voltage@50Ω
≤3mVpp≤2mVpp≤1.5mVpp
Maximum output amplitude@Hiz
5.0V5.0V5.0V
Working Voltage
9-12VDC9-12VDC9-12VDC
Working current
<100mA<100mA<100mA
Output connector
SMASMASMA
Output Impedance
50Ω50Ω50Ω
Output coupling mode
DCDCDC
Working temperature
-20~65℃-20~65℃-20~65℃
Storage temperature
-40~85℃-40~85℃-40~85℃
Dimension
81mm x 64mm x 25mm81mm x 64mm x 25mm81mm x 64mm x 25mm


Image

fpd510-r1000.jpg


Product Inquiry

Leading manufacturer of photodetector modules and fiber optic sensing system modules