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InGaAs Amplified Photodetector 900-1700nm Free-Space
The series of photodetectors with 2mm large target surface photodetector chip has very high sensitivity, suitable for the response speed in the us level of photodetection equipment.
PD10D-spec.pdf download
Features
Item | PD10D-NIR-10k | PD10D-NIR-70k | PD10D-NIR-200k |
---|---|---|---|
Materials | InGaAs | InGaAs | InGaAs |
Wavelength | 900-1700nm | 900-1700nm | 900-1700nm |
Input Connector | Free-Space | Free-Space | Free-Space |
Responsiveness | 0.9A/W @ 1550nm | 0.9A/W @ 1550nm | 0.9A/W @ 1550nm |
Photosensitive diameter | 1mm | 2mm | 2mm |
Bandwidth | DC-10kHz | DC-70kHz | DC-200kHz |
Rise time | 35us | 5us | 1.8us |
Cross-group gain | 3kV/A | 1000kV/A | 100kV/A |
Minimum optical power | -26.5dBm (2.22uw) | -56.5dBm (2.22nw) | -47.8dBm (16.6nw) |
Saturated optical power | 2.7dBm (1.85mw) | -22.6dBm (5.55uw) | -12.6dBm (55.5uw) |
Noise voltage@50Ω | ≤3mVpp | ≤2mVpp | ≤1.5mVpp |
Maximum output amplitude@Hiz | 5.0V | 5.0V | 5.0V |
Working Voltage | 9-12VDC | 9-12VDC | 9-12VDC |
Working current | <100mA | <100mA | <100mA |
Output connector | SMA | SMA | SMA |
Output Impedance | 50Ω | 50Ω | 50Ω |
Output coupling mode | DC | DC | DC |
Working temperature | -20~65℃ | -20~65℃ | -20~65℃ |
Storage temperature | -40~85℃ | -40~85℃ | -40~85℃ |
Dimension | 81mm x 64mm x 25mm | 81mm x 64mm x 25mm | 81mm x 64mm x 25mm |