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1550nm Butterfly SOA 14PIN
Semiconductor optical amplifier (SOA) JSA-BT515G25 series products are mainly applied to 1550nm wavelength optical amplification, which can significantly increase the output optical power
Model：JSA-BT515G25
Contact：
Huang
Email: Hqy@ybphotonics.com
Huang
Email: Hqy@ybphotonics.com
Product Info
Introduction
The series of products are based on the standard packaging platform of the Institute of Optoelectronic Integrated Microsystems, Tsinghua University, and use sealed inorganic butterfly device packaging technology
Manuals
soa-spec.pdf download
Features
- SOA chips made in China, full process autonomy,
- High gain, low power consumption, low polarization-related loss, high extinction ratio, etc,
- Supports temperature monitoring and TEC thermoelectric control to ensure stable operation over the full temperature operating range.
Appications
- Used in distributed fiber optic sensing systems to replace acousto-optic modulators and achieve optical switching functions,
- Used in broad-spectrum light sources, such as broad-spectrum light sources for demodulators of fiber grating,
- Used in optical communication systems to achieve 1550 wavelength optical signal amplification, replacing some EDFA applications,
- Used in 1550nm solid-state LIDAR or FM continuous wave LIDAR in combination with narrow linewidth lasers to produce pulsed light.
Specifications
Parameters Symbols Conditions Min. Type. Max. Unit Operating wavelength λ --- 1490 1515 1590 nm Bandwidth Δλ @-3dB 55 --- 60 nm Saturated optical power Psat If=250mA 12 --- 15 dBm Small signal gain Gain (Max) G If=250mAPin=-25dBm 25 30 dB Operating current optical power If 250 400 mA Forward Voltage Vf 1.8 V Extinction ratio 1 ER1 If=250mA/If=0mAPin=0dBm 50 dB Extinction ratio 2 ER2 If=250mA/If=-0.4mAPin=0dBm 65 dB TEC Current ITEC 1.8 A TEC Voltage VTEC 3.4 V Polarization-related gain PDG 1.5 2.0 dB Thermistor resistance value Rtherm T=25℃ 9.5 10 10.5 KΩ Thermistor current Itherm 5 mA Airtightness 1 T=25℃ 1*10^-12 1*10^-11 1*10-8 Pa.m3 /s Operating temperature TC I=Iop -10 70 °C Storage temperature Tstg 85 °C Total power consumption P 4 W
Typical Characteristics
Structural dimensions and pin definition
The series of products are based on the standard packaging platform of the Institute of Optoelectronic Integrated Microsystems, Tsinghua University, and use sealed inorganic butterfly device packaging technology
Manualssoa-spec.pdf download
Features
- SOA chips made in China, full process autonomy,
- High gain, low power consumption, low polarization-related loss, high extinction ratio, etc,
- Supports temperature monitoring and TEC thermoelectric control to ensure stable operation over the full temperature operating range.
Appications
- Used in distributed fiber optic sensing systems to replace acousto-optic modulators and achieve optical switching functions,
- Used in broad-spectrum light sources, such as broad-spectrum light sources for demodulators of fiber grating,
- Used in optical communication systems to achieve 1550 wavelength optical signal amplification, replacing some EDFA applications,
- Used in 1550nm solid-state LIDAR or FM continuous wave LIDAR in combination with narrow linewidth lasers to produce pulsed light.
Specifications
| Parameters | Symbols | Conditions | Min. | Type. | Max. | Unit |
|---|---|---|---|---|---|---|
| Operating wavelength | λ | --- | 1490 | 1515 | 1590 | nm |
| Bandwidth | Δλ | @-3dB | 55 | --- | 60 | nm |
| Saturated optical power | Psat | If=250mA | 12 | --- | 15 | dBm |
| Small signal gain Gain (Max) | G | If=250mAPin=-25dBm | 25 | 30 | dB | |
| Operating current optical power | If | 250 | 400 | mA | ||
| Forward Voltage | Vf | 1.8 | V | |||
| Extinction ratio 1 | ER1 | If=250mA/If=0mAPin=0dBm | 50 | dB | ||
| Extinction ratio 2 | ER2 | If=250mA/If=-0.4mAPin=0dBm | 65 | dB | ||
| TEC Current | ITEC | 1.8 | A | |||
| TEC Voltage | VTEC | 3.4 | V | |||
| Polarization-related gain | PDG | 1.5 | 2.0 | dB | ||
| Thermistor resistance value | Rtherm | T=25℃ | 9.5 | 10 | 10.5 | KΩ |
| Thermistor current | Itherm | 5 | mA | |||
| Airtightness 1 | T=25℃ | 1*10^-12 | 1*10^-11 | 1*10-8 | Pa.m3 /s | |
| Operating temperature | TC | I=Iop | -10 | 70 | °C | |
| Storage temperature | Tstg | 85 | °C | |||
| Total power consumption | P | 4 | W |
Typical Characteristics
Structural dimensions and pin definition
Product Inquiry
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